2SA1734 2002-08-19 1 toshiba transistor silicon pnp triple epitaxial type (pct process) 2SA1734 power amplifier applications power switching applications low saturation voltage: v ce (sat) = ? 0.5 v (max) (i c = ? 700 ma) high speed switching time: t stg = 0.2 s (typ.) small flat package p c = 1 .0 to 2.0 w (mounted on ceramic substrate) complementary to 2sc4539 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 40 v collector-emitter voltage v ceo ? 30 v emitter-base voltage v ebo ? 6 v collector current i c ? 2 a base current i b ? 1.2 a p c 500 collector power dissipation p c (note) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: mounted on ceramic substrate (250 mm 2 0.8 t) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SA1734 2002-08-19 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 40 v, i e = 0 D D ? 0.1 a emitter cut-off current i ebo v eb = ? 6 v, i c = 0 D D ? 0.1 a collector-emitter breakdown voltage v (br) ceo i c = ? 10 ma, i b = 0 ? 50 D D v h fe (1) v ce = ? 2 v, i c = ? 100 ma 120 D 400 dc current gain h fe (2) v ce = ? 2 v, i c = ? 1.0 a 40 D D collector-emitter saturation voltage v ce (sat) i c = ? 700 ma, i b = ? 35 ma D D ? 0.5 v base-emitter saturation voltage v be (sat) i c = ? 700 ma, i b = ? 35 ma D D ? 1.2 v transition frequency f t v ce = ? 2 v, i c = ? 100 ma D 100 D mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz D 16 D pf turn-on time t on D 0.1 D storage time t stg D 0.2 D switching time fall time t f D 0.1 D s marking l b type name 20 ? i b2 v cc = ? 14 v i b1 20 s ? i b1 = i b2 =35 ma, duty cycle 1% i b1 i b2 output input
2SA1734 2002-08-19 3 v ce (sat) ? i c v be (sat) ? i c i c ? v ce h fe ? i c collector current i c (ma) collector-emitter voltage v ce (v) collector current i c (a) collector current i c (ma) collector-emitter saturation voltage v ce (sat) (v) dc current gain h fe collector current i c (ma) base-emitter saturation voltage v be (sat) (v) 10 0 10 2 0 common emitter ta 25c 0.8 i b 1 ma 8 4 1.0 0.6 0.2 6 0 2 0.4 8 6 4 3 1 1000 10 300 3 300 common emitter v ce 2 v 30 30 100 1 ta 100c 100 25 25 10 1000 3000 3 ta 25c 25 100 common emitter i c /i b 20 1 100 10 300 3 30 3 30 100 0.1 10 1 1000 3000 0.3 10 common emitter i c /i b 20 0.01 ta 100c 25 25 1 0.03 0.1 0.3 3 1 10 300 3 30 100 1000 3000
2SA1734 2002-08-19 4 p c ? ta collector-emitter voltage v ce (v) i c ? v be collector current i c (a) collector current i c (a) safe operating area base-emitter voltage v be (v) ambient temperature ta (c) collector power dissipation p c (w) 0 1.6 0.8 0.4 0 0.4 1.2 common emitter v ce 2 v 0.8 1.2 25 ta 100c 0.2 0.6 2.0 1.0 25 (1) 0 160 100 140 40 80 0 0.6 0.2 0.8 0.4 1.2 20 (1) mounted on ceramic substrate (250 mm 2 0.8 t) (2) no heat sink (2) 1.0 60 120 0.1 10 1 0.3 1 10 3 0.01 5 30 0.005 0.03 i c max (pulse) * i c max (continuous) 100 ms * 10 ms * * t 1 ms v ceo max 0.1 3 0.3 100 * : single nonrepetitive pulse ta 25c ** : mounted on ceramic substrate. curves must be derated linearly with increase in temperature ** : dc operation 40 50 0.8 t ** : dc operation 250 mm 2 0.8 t dc operation ta 25c
2SA1734 2002-08-19 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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